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Advance Technical Information Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS
VDSS ID25
= = RDS(on) trr
TO-247 (IXFH)
600 V 26 A 270 m 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 5 TC = 25C
Maximum Ratings 600 600 30 40 26 65 26 40 1.2 10 V V V V A A A mJ J V/ns
G D
G
D
TO-3P (IXFQ)
S
S
D (TAB)
TO-268 (IXFT)
G
S
D (TAB)
PLUS220 (IXFV) 460 -55 ... +150 150 -55 ... +150 W C C C C C
G
D
S
D (TAB)
1.6 mm (0.062 in.) from case for 10 s Plastic body Mounting torque (TO-3P&TO-247) Mounting force (PLUS220) TO-3P TO-248 TO-268 PLUS220 & PLUS220SMD
300 250
PLUS220SMD (IXFV_S)
1.13/10 Nm/lb.in. 11..65/2.5..15 5.5 6.0 5.0 4.0 N/lb g g g g
G S G = Gate S = Source D (TAB) D = Drain TAB = Drain
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 V, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 600 2.5 5.0 100 25 250 270 V V nA A A m
Features Fast Recovery diode Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density
DS99435(08/05)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2005 IXYS All rights reserved
IXFV 26N60P
Symbol Test Conditions
IXFH 26N60P IXFQ 26N60P IXFV 26N60PS IXFT 26N60P
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 16 26 4150 S pF pF pF ns ns ns ns nC nC nC 0.27 K/W K/W
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 20 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
400 27 25
VGS = 10 V, VDS = 0.5 ID25 RG = 5 (External)
27 75 21 72
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
27 24
TO-3P, PLUS220 & TO-247
0.21
Source-Drain Diode Symbol IS ISM VSD trr IRM QRM Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, pulse test IF = 25A, -di/dt = 100 A/s VR = 100V; VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 26 78 1.5 150 7 0.7 250 A A V ns A C
Characteristic Curves
Fig. 1. Output Characteristics @ 25C
60 24 20 VGS = 10V 7V 54 48 42 VGS = 10V 7V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
16 12 8 4 5V 0 0 1 2 3 4 5 6 7 6V
36 30 24 18 12
6V
5V 6 0 0 3 6 9 12 15 18 21 24 27 30
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
V D S - Volts
6,683,344 6,710,405B2 6,710,463
6,727,585 6,759,692
IXFV 26N60P
Fig. 3. Output Characte ris tics @ 125C
3.2 24 20 VGS = 10V 7V 2.8
IXFH 26N60P IXFQ 26N60P IXFV 26N60PS IXFT 26N60P
Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem pe rature
VGS = 10V
R D S ( o n ) - Normalized
2.4 2 1.6 I D = 13A 1.2 0.8 0.4
I D - Amperes
16 12 8 4 0 0 2 4 6 8 10
6V
I D = 26A
5V
12
14
16
-50
-25
0
25
50
75
100
125
150
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs . ID
3.2 VGS = 10V 2.8 TJ = 125 C 30 27 24 21
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Te m perature
R D S ( o n ) - Normalized
I D - Amperes
TJ = 25 C
2.4
18 15 12 9 6 3
2
1.6
1.2
0.8 0 10 20 30 40 50 60
0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
TC - Degrees Centigrade
Fig. 7. Input Adm ittance
50 45 40 50 45 40
Fig. 8. Transconductance
TJ = -40 C 25 C 125 C
g f s - Siemens
I D - Amperes
35 30 25 20 15 10 5 0 4 4.5 5 5.5 6 6.5 7 7.5 TJ = 125 C 25 C -40 C
35 30 25 20 15 10 5 0 0 5
10
15
20
25
30
35
40
45
50
V G S - Volts
I D - Amperes
(c) 2005 IXYS All rights reserved
IXFV 26N60P
Fig. 9. Source Current vs. Source-To-Drain Voltage
80 70 60 10 9 8
IXFH 26N60P IXFQ 26N60P IXFV 26N60PS IXFT 26N60P
Fig. 10. Gate Charge
VDS = 300V I D = 13A I G = 10mA
I S - Amperes
7
VG S - Volts
TJ = 25 C 0.7 0.8 0.9 1 1.1
50 40 30 20 10 0 0.4 0.5 0.6 TJ = 125 C
6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80
V S D - Volts Fig. 11. Capacitance
10000 f = 1MHz
Q G - nanoCoulombs
Capacitance - picoFarads
C iss 1000
C oss 100
C rss 10 0 5 10 15 20 25 30 35 40
V D S - Volts
Fig. 12. Maxim um Transient Therm al Resistance
1.00
R ( t h ) J C - C / W
0.10
0.01 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFV 26N60P
TO-3P (IXFQ) Outline TO-247 AD (IXFH) Outline
IXFH 26N60P IXFQ 26N60P IXFV 26N60PS IXFT 26N60P
TO-268 (IXFT) Outline
1
2
3
Dim.
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
PLUS220 (IXFV) Outline
E E1 L2 A A1 E1
PLUS220SMD (IXFV_S)
E E1 A A1
L2
E1
D1 D
D
L3 L1
A3 L3 L L4
L
L1 2X b e c A2
3X b 2X e
c A2
Terminals: 1 - Gate 3 - Source
2 - Drain TAB - Drain
A A1 A2 A3 b c D D1 E E1 e L L1 L2 L3 L4
A A1 A2 b c D D1 E E1 e L L1 L2 L3
Terminals: 1 - Gate 2 - Drain 3 - Source 4 (TAB) - Drain
(c) 2005 IXYS All rights reserved

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